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| Power Transistors 2SC3872 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm q q q q 16.20.5 12.5 3.5 Solder Dip High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Full-pack package which can be installed to the heat sink with one screw (TC=25C) Ratings 500 500 400 7 20 10 5 70 3 150 -55 to +150 Unit V V V V A A A W C C 0.7 s Features 15.00.3 11.00.2 5.00.2 3.2 21.00.5 15.00.2 3.20.1 2.00.2 2.00.1 1.10.1 5.450.3 10.90.5 1 2 3 0.60.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature Symbol VCBO VCES VCEO VEBO ICP IC IB PC Tj Tstg 1:Base 2:Collector 3:Emitter TOP-3 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time (TC=25C) Symbol ICBO IEBO VCEO hFE1 hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 500V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 5V, IC = 0.1A VCE = 5V, IC = 5A IC = 5A, IB = 1A IC = 5A, IB = 1A VCE = 10V, IC = 0.5A, f = 10MHz IC = 5A, IB1 = 1A, IB2 = -2A, VCC = 150V 25 0.7 2 0.3 400 15 8 1 1.5 V V MHz s s s min typ max 100 100 Unit A A V 1 Power Transistors PC -- Ta 80 10 (1) (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) Without heat sink (PC=3.0W) IB=1000mA 8 TC=25C 2SC3872 IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) 100 IC/IB=5 30 10 3 1 25C 0.3 0.1 0.03 0.01 0.01 0.03 -25C TC=100C VCE(sat) -- IC Collector power dissipation PC (W) 70 60 50 40 30 20 10 Collector current IC (A) 600mA 500mA 450mA 400mA 350mA 300mA 250mA 200mA 150mA 6 4 (2) 2 100mA 50mA (3) 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0.1 0.3 1 3 10 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) -- IC 100 10000 IC/IB=5 hFE -- IC 1000 VCE=5V 300 100 30 10 3 1 0.3 0.1 0.01 0.03 fT -- IC VCE=10V f=10MHz TC=25C Base to emitter saturation voltage VBE(sat) (V) Forward current transfer ratio hFE 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 25C 100C TC=-25C 1000 300 100 TC=100C 30 10 3 1 0.01 0.03 -25C 25C 0.1 0.3 1 3 10 0.1 0.3 1 3 10 Transition frequency fT (MHz) 30 3000 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Cob -- VCB 10000 100 IE=0 f=1MHz TC=25C 30 ton, tstg, tf -- IC Pulsed tw=1ms Duty cycle=1% IC/IB=5 (2IB1=-IB2) VCC=200V TC=25C tstg Area of safe operation (ASO) 100 30 I CP Non repetitive pulse TC=25C t=0.5ms 1ms 10ms DC Collector output capacitance Cob (pF) 3000 1000 300 100 30 10 3 1 0.1 Switching time ton,tstg,tf (s) Collector current IC (A) 8 10 3 1 0.3 0.1 0.03 0.01 ton 10 3 1 0.3 0.1 0.03 0.01 IC tf 0.3 1 3 10 30 100 0 1 2 3 4 5 6 7 1 3 10 30 100 300 1000 Collector to base voltage VCB (V) Collector current IC (A) Collector to emitter voltage VCE (V) 2 Power Transistors Area of safe operation, reverse bias ASO 40 35 Lcoil=200H IC/IB=5 (2IB1=-IB2) TC=25C 2SC3872 Reverse bias ASO measuring circuit L coil IB1 Vin T.U.T IC Collector current IC (A) 30 25 20 15 10 5 0 0 100 200 300 400 500 600 700 800 ICP -IB2 VCC tW Vclamp Collector to emitter voltage VCE (V) Rth(t) -- t 103 (1) PT=10V x 0.3A (3W) and without heat sink (2) PT=10V x 1.0A (10W) and with a 100 x 100 x 2mm Al heat sink Thermal resistance Rth(t) (C/W) 102 (1) 10 (2) 1 10-1 10-4 10-3 10-2 10-1 1 10 102 103 104 Time t (s) 3 |
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